Wafer Laser Modified Cutting Equipment
This equipment is used for laser modification and cutting of silicon-based wafers in the semiconductor industry for 8-inch and above chip sealing and testing plants.

Product Data

Product advantages:

  • High quality

          There is no damage on the surface, no cutting seam, and the edge collapse is very small (≤ 2 μ m) , the edge is small (< 3 μ m)

  • High efficiency

          Multi focus modification mode can be adopted to multiply the cutting efficiency

  • Good stability

          The laser has high average power stability (≤± 3% over 24 hours) and high beam quality (M ² < 1.5)

 

Sample display:

Schematic diagram of cutting section
8 inch silicon-based wafer, single point layer by layer modification, thickness 730 μ m

laser cutter

 

 

Upper surface (chip structure surface)
8 inch silicon-based wafer, single point layer by layer modification, thickness 730 μ m

laser cutter

 

 

Lower surface: chip structure surface
8 inch silicon-based wafer, single point layer by layer modification, thickness 730 μ m

laser cutter

Item

Main parametetrs

Laser

Center wavelength

Custom infrared wavelength

Cutting head

Self-developed collimating head

Performance

Effective working stroke

300x400mm(optional)

Repetitive positioning accuracy 

±1μm

Visual positioning

Automatic visual positioning

Processing method

Layer by layer upgrading, single point / multi-point processing

Others

Wafer size

8 inch (12inch is compatible )

Processing process

Laser modified cutting - film spreading

Processing object

MEMS chip, silicon-based biochip, silicon wheat chip, CMOS chip, etc
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